Cart (Loading....) | Create Account
Close category search window

A New Mobility Extraction Technique Based on Simultaneous Ultrafast I_{d} V_{g} and C_{\rm cg} V_{g} Measurements in MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ji, Z. ; Sch. of Eng., John Moores Univ., Liverpool, UK ; Zhang, J.F. ; Zhang, W.

Channel carrier mobility in MOSFETs is a key parameter for process development, material selection, and device modeling. The existing techniques for mobility evaluation suffer from one or more of the following shortcomings: slow speed and vulnerability to fast trapping, drain bias dependence, cable-changing, sensitivity to gate leakage, complex procedure, and a need for simulation. This paper proposes and develops a new technique to overcome these shortcomings. - and - are simultaneously measured so that the effect of on mobility is inherently taken into account, and the measured mobility becomes -independent. The cable connection switching between - and - measurements is avoided, and the measurement completes in one pulse. This allows the measurement time reducing to the order of microseconds and, in turn, minimizing the effect of charge trapping. Unlike the standard high-frequency - , is independent of gate leakage here, and the applicability of new technique to thin gate oxides of high gate leakage will be demonstrated. These advantages, together with its easy implementation, should make this technique a simple and robust tool for process development, material selection, and device modeling in future generations of CMOS technology.

Published in:

Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 7 )

Date of Publication:

July 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.