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0.07 mm2, 2 mW, 75 MHz-IF, fourth-order BPF using source-follower-based resonator in 90 nm CMOS

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4 Author(s)
Chen, Y. ; Inst. of Microelectron., Tsinghua Univ., Beijing, China ; Mak, P.-I. ; Zhang, L. ; Wang, Y.

A highly-transistorised bandpass filter (BPF) using a source-follower-based (SFB) resonator is proposed. It benefits from the advantageous properties of the source follower (e.g. no parasitic pole, linear VGS I/O relationship, high-input and low-output impedances), while combining it with a compact and low-power grounded differential active inductor to synthesise the complex poles. Fabricated in 90 nm CMOS, a fourth-order 75 MHz-IF BPF prototype merging two such SFB resonators measures a 10 MHz bandwidth at 2 mW of power. The die size is merely 0.07 mm2.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 10 )