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Efficiency degradation behaviors of current/thermal co-stressed GaN-based blue light emitting diodes with vertical-structure

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6 Author(s)
Liu, Lilin ; School of Physics and Engineering, Sun Yat-Sen University, Guangzhou City, Guang Dong Province, Guangzhou 510275, People’s Republic of China ; Ling, Minjie ; Yang, Jianfu ; Xiong, Wang
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With this work, we demonstrate a three-stage degradation behavior of GaN based LED chips under current/thermal co-stressing. The three stages in sequence are the initial improvement stage, the platform stage, and the rapid degradation stage, indicating that current/thermal co-stressing activates positive effects and negative ones simultaneously, and the dominant degradation mechanisms evolve with aging time. Degradation mechanisms are discussed. Electric current stress has dual characters: damaging the active layers by generating defects and at the same time improving the p-type conductivity by activating the Mg-dopant. High temperature stresses will promote the effects from electric current stresses. The activation of the Mg-dopant will saturate, whereas the generation of defects is carried on in a progressive way. Other mechanisms, such as deterioration of ohmic contacts, also operate. These mechanisms compete/cooperate with each other and evolve with aging time, resulting in the observed three-stage degradation behavior. There exist risks to predict the lifetime of LEDs by a model with a constant accelerated factor.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 9 )

Date of Publication:

May 2012

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