By Topic

High-Performance Solenoidal RF Transformers on High-Resistivity Silicon Substrates for 3D Integrated Circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Zhiping Feng ; Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA ; Matthew R. Lueck ; Dorota S. Temple ; Michael B. Steer

Soleniod-like transformers based on a traveling-wave design and using advanced through silicon via process technology are reported for operation at frequencies from 1 to 14 GHz. The symmetrical 1:1 transformers are designed as compact slow-wave transmission-line structures with well-defined signal return paths. One-, two-, three-, and four-turn transformers have 1-dB bandwidths ranging from 6 to 9.2 GHz, and midband insertion losses from 0.24 to 0.37 dB. The measured intrinsic loss is 0.46 dB or less up to 10 GHz, and 0.97 dB up to 14 GHz. Relatively simple and scalable physically based lumped-element circuit models accurately predict the performance of these low parasitic transformers.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:60 ,  Issue: 7 )