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A dynamic time-domain model suitable for simulating the behavior of high-speed high-power p-i-n diodes is presented. This time-domain model accurately describes not only the charge storage behavior in the p-i-n diode in forward bias, but also the reverse-bias capacitance and resistance as a function of reverse voltage. A SPICE implementation of the time-domain model is fully described and a spreadsheet is being made available to the microwave community. The time-domain model is verified with experimental data and good agreement was obtained in both diode bias states. Three applications describing the linear, nonlinear, and transient behavior of the p-i-n diode simulated using the time-domain model are also presented. This improved time-domain model and associated SPICE implementation allows full modeling of high-speed high-frequency p-i-n diodes.