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In this work, nickel germanide Schottky contacts have been fabricated on n-type germanium (n-Ge) with an optimum barrier height of 0.63 eV. For rapid thermal annealing (RTA) temperatures above 300 °C, all phases of nickel and germanium convert to nickel mono-germanide (NiGe). However, higher RTA temperatures are also found to cause agglomeration of the NiGe phase and higher leakage current. So, the optimum temperature for Schottky-based source/drain contact formation on n-Ge is ∼300 °C, where the nickel mono-germanide phase is formed but without phase agglomeration.