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Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

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8 Author(s)
Gajula, D.R. ; School of Electronics, Electrical Engineering and Computer Science, Queen’s University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH, United Kingdom ; McNeill, D.W. ; Coss, B.E. ; Dong, H.
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In this work, nickel germanide Schottky contacts have been fabricated on n-type germanium (n-Ge) with an optimum barrier height of 0.63 eV. For rapid thermal annealing (RTA) temperatures above 300  °C, all phases of nickel and germanium convert to nickel mono-germanide (NiGe). However, higher RTA temperatures are also found to cause agglomeration of the NiGe phase and higher leakage current. So, the optimum temperature for Schottky-based source/drain contact formation on n-Ge is ∼300 °C, where the nickel mono-germanide phase is formed but without phase agglomeration.

Published in:

Applied Physics Letters  (Volume:100 ,  Issue: 19 )

Date of Publication:

May 2012

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