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Q -Band and W -Band Power Amplifiers in 45-nm CMOS SOI

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4 Author(s)
Joohwa Kim ; Electr. & Comput. Eng. Dept., Univ. of California at San Diego, La Jolla, CA, USA ; Dabag, H. ; Asbeck, P. ; Buckwalter, J.F.

The performance of high-efficiency millimeter-wave (mm-wave) power amplifiers (PAs) implemented in a 45-nm silicon-on-insulator (SOI) process is presented. Multistage class-AB designs are investigated for Q- and W-bands and a push-pull amplifier is investigated at Q-band. The Q-band, class-AB PA achieves a saturated output power of 15 dBm and power-added efficiency (PAE) of 27% from a 2-V supply. The W-band, class-AB PA achieves a saturated output power of 12.4 dBm and PAE of 14.2% from a 2-V supply. The performance demonstrates the high efficiency possible for mm-wave PAs in a SOI process.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:60 ,  Issue: 6 )

Date of Publication:

June 2012

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