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We propose a novel extraction method of trap densities Dt in thin-film transistors, which utilizes advantages of both capacitance-voltage (C-V) and field-effect conductance (F-E) methods. First, the threshold voltage Vth is obtained from the I-V characteristics. Next, the C-V method is used below Vth. Finally, the F-E method is used above Vth, where the surface potential φs at Vth obtained from the C-V method is employed as an initial φs for the F-E method. The novel extraction method can determine Dt from the midgap to near the electrical conductive bands.