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We developed a thin-film transistor (TFT) with an amorphous-indium-gallium-zinc oxide (IGZO) channel and aluminium oxide (AlOx) gate dielectric stack that was formed using a solution-based atmospheric pressure chemical vapor deposition. A breakdown electric field of 5.9 MV/cm and a dielectric constant of 6.8 were achieved for the AlOx gate dielectric. The nonvacuum-processed IGZO TFT gave a field-effect mobility of 4.2 cm2 · V-1 · s-1 and an on/off current ratio of over 108. Moreover, the proposed deposition method is a powerful tool for material research to explore multicomponent oxide insulators and semiconductors.