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High-linearity two-watt power amplifier for multiband wireless applications

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4 Author(s)
Faiz, M.M. ; ECE Dept., Florida Inst. of Technol., Melbourne, FL, USA ; Earles, S.K. ; Bin Hou ; Shuyun Zhang

Amplifiers in the final stages of wireless transmitters boost the power level of the up-converted signals, but the ultimate power level is not same for all transmitters. One specific amplifier can be used as a driver in a cellular base station or as last stage in applications like a pico-cell. However, the amplifier has to meet the stringent linearity requirement imposed by these different standards. In this paper, we present a highly linear single stage two watt power amplifier in GaAs HBT process. The amplifier can be externally matched at the input and output, thus provides flexibility to optimize it across a specific frequency band of interest between 400 MHz and 2700 MHz. The design includes a novel approach of utilizing the nonlinear base-collector and base-emitter diode capacitances of a transistor biased in the saturation region to improve the linearity of the amplifier. The transistor provides a nonlinear feedback path between the output and input of the amplifier and thus minimizes the third order intermodulation distortion (IM3) component.

Published in:

Southeastcon, 2012 Proceedings of IEEE

Date of Conference:

15-18 March 2012