By Topic

Solar-Blind Photoresistors Based on \hbox {Mg}_{0.48} \hbox {Zn}_{0.52}\hbox {O} Thin Films Grown on r\hbox {-Al}_{2} \hbox {O}_{3} Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
F. J. Liu ; Key Laboratory of Luminescence and Optical Information of the Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, China ; Z. F. Hu ; L. Zhu ; Z. J. Li
more authors

Solar-blind photoresistors based on Mg0.48Zn0.52O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite Mg0.48Zn0.52O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO photoresistors exhibit a large dark/photoresistance ratio up to 1.7 × 104 with the light intensity of 0.61 mW/cm2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of 1.5 × 10-3 Ω-1· W-1.

Published in:

IEEE Transactions on Electron Devices  (Volume:59 ,  Issue: 7 )