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Solar-Blind Photoresistors Based on \hbox {Mg}_{0.48} \hbox {Zn}_{0.52}\hbox {O} Thin Films Grown on r\hbox {-Al}_{2} \hbox {O}_{3} Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

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8 Author(s)
Liu, F.J. ; Key Lab. of Luminescence & Opt. Inf. of the Minist. of Educ., Beijing Jiaotong Univ., Beijing, China ; Hu, Z.F. ; Zhu, L. ; Li, Z.J.
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Solar-blind photoresistors based on Mg0.48Zn0.52O thin films were fabricated on r-plane sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy. High-quality a-plane-orientation single-phase wurtzite Mg0.48Zn0.52O thin films are demonstrated by X-ray diffraction and absorption spectra. The MgZnO photoresistors exhibit a large dark/photoresistance ratio up to 1.7 × 104 with the light intensity of 0.61 mW/cm2 at 260 nm. The spectral response shows a sharp response peak only in the solar-blind region with maximum responsivity of 1.5 × 10-3 Ω-1· W-1.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 7 )