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NiZn ferrite thin films prepared by Facing Target Sputtering

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4 Author(s)
Qian, Zhenghong ; Dept. of Chem. Eng. & Mater. Sci., Minnesota Univ., Minneapolis, MN, USA ; Wang, Geng ; Sivertsen, J.M. ; Judy, J.H.

NiZn ferrite thin films with spinel structure have been deposited successfully on glass substrates at a relatively low temperature by means of the Facing Target Sputtering (FTS) technique. In addition to substrate temperature, PO2/P (O2 partial pressure over total sputtering pressure) ratio was found to be another major factor in controlling the in-plane coercivity Hc and saturation moment density Ms of NiZn ferrite thin films. The increase of Ms is attributed to the increase of the substrate temperature or the decrease of PO2/P ratio; the decrease of H c is associated with the increase of both substrate temperature and PO2/P ratio. It is believed that the PO2 /P ratio plays a critical role in the formation of NiZn ferrite film, which determines the magnetic properties of the film. With the increase of PO2/P ratio, the NiZn thin film changes from a strong (111), (311) texture-dominated polycrystal structure to an amorphous structure and the grain size become smaller. In this study, sputtering conditions of NiZn ferrite films were optimized to achieve a low in-plane coercivity Hc and a relatively high saturation moment density Ms

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Magnetics, IEEE Transactions on  (Volume:33 ,  Issue: 5 )