By Topic

Capacitance and S -Parameter Techniques for Dielectric Characterization With Application to High- k PMNT Thin-Film Layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Wenbin Chen ; School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin, China ; Kevin G. McCarthy ; Alan Mathewson ; Mehmet Copuroglu
more authors

This paper presents a method for measuring the complex permittivity of a dielectric material on a dielectric/metal stack without etching the dielectric layer. A series of circular capacitor test structures were designed and fabricated. For the first time, the unwanted capacitance Cp, which is formed by the oxide layer between the bottom metal layer and the silicon substrate, was defined and systematically investigated. The technique is shown to be suitable for characterization of a lead magnesium niobate-lead titanate (PMNT) material on the complex cross sections involved in the development of a novel high-k material. An extremely high- k of 1115 (high capacitance density of 26 fF/μm2) for a PMNT metal-insulator-metal (MIM) capacitor was achieved. In addition, low leakage current density of 2 × 10-10 A/cm2 and low loss tangent were also obtained. These results clearly showed that the PMNT MIM capacitors are very promising for both decoupling and more general RF and mixed-signal applications until the year 2020, according to the International Technology Roadmap for Semiconductors (ITRS).

Published in:

IEEE Transactions on Electron Devices  (Volume:59 ,  Issue: 6 )