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Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron blocking layer

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7 Author(s)
Xia, Chang Sheng ; Crosslight Software, Inc., China Branch, Suite 906, Building JieDi, 2790 Zhongshan Bei Road, Shanghai 200063, China ; Li, Z.Q. ; Lu, Wei ; Zhang, Zhi Hua
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Blue InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with the conventional AlGaN and AlGaN-GaN-AlGaN (AGA) electron blocking layer (EBL) are investigated numerically. The simulation results show that the LEDs with the AGA EBL exhibit much higher output power and smaller efficiency droop at high current as compared to those with the conventional EBL due to the enhancement of the electron confinement and improvement of the hole injection from p-type region, which are induced by the strong electrostatic fields and tunneling effect in the AGA EBL.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 9 )

Date of Publication:

May 2012

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