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Surface properties of stoichiometric and defect-rich indium oxide films grown by MOCVD

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5 Author(s)
Himmerlich, M. ; Institut für Physik and Institut für Mikro- und Nanotechnologien, Technische Universität Ilmenau, PF 100565, 98684 Ilmenau, Germany ; Wang, Ch.Y. ; Cimalla, V. ; Ambacher, O.
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The influence of metalorganic chemical vapor deposition growth conditions on the indium oxide surface properties is investigated using photoelectron spectroscopy. Particular attention is paid to nanocrystalline samples grown at fairly low temperatures which are known for their high sensitivity to ozone. The results are compared to measurements on In2O3 films in cubic and rhombohedral crystal structure. It is shown that the growth conditions have a strong impact on the physical properties and that samples grown at 200 °C or below are highly oxygen-deficient and rich in defects, influencing the surface chemical and electronic properties and resulting in high ozone sensitivity.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 9 )

Date of Publication:

May 2012

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