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Metal–Oxide RRAM

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9 Author(s)
Wong, H.-S.P. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Heng-Yuan Lee ; Shimeng Yu ; Yu-Sheng Chen
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In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

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Proceedings of the IEEE  (Volume:100 ,  Issue: 6 )