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Explicit model for tunneling and thermionic current in Schottky barrier Double-Gate MOSFETs

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4 Author(s)
Schwarz, M. ; Competence Center for Nanotechnol. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany ; Holtij, T. ; Kloes, A. ; Iniguez, B.

In this paper we present a new approach to calculate the tunneling and thermionic current in Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFETs). This prediction is based on a physics-based two-dimensional analysis. Analytical approximations for the spatial tunneling current density and carrier distributions in the channel are introduced. From this explicit analytical model equations for the tunneling current are derived in closed-form which inherently include two-dimensional effects on the tunneling probability and the carrier distributions. Furthermore, an explicit analytical model equation for the thermionic current is derived. Comparison of the current with an already existing analytical numerical model and TCAD simulation data are in a good agreement for channel lengths down to 22nm.

Published in:

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Date of Conference:

6-7 March 2012