Cart (Loading....) | Create Account
Close category search window
 

Very large piezoresistance in Si1−xGex alloys

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Murphy-Armando, F. ; Tyndall Nat. Inst., Univ. Coll. Cork, Cork, Ireland ; Fahy, S.

First-principles electronic structure methods are used to predict the piezoresistance of n-type Si1-xGex at various alloy compositions and strain configurations. We report very large gauge factors, G = dρ/dϵ/ρ, where ρ is resistivity and ϵ is strain: for compositions x ≃ 0.90 under uniaxial strain in the 〈111〉 direction, G >; 500. These gauge factors are over three times larger than the best values for single crystalline bulk Si. This large change in resistance due to strain is explained by the change in the occupancy of the higher-conductance L valley relative to the lower-conductance Δ valley, coupled to a change in inter-valley alloy and phonon scattering.

Published in:

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Date of Conference:

6-7 March 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.