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In situ SiOx interfacial layer formation for scaled ALD high-k/metal gate stacks

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4 Author(s)
Dentoni Litta, E. ; Sch. of ICT, KTH R. Inst. of Technol., Kista, Sweden ; Hellstrom, P.-E. ; Henkel, C. ; Ostling, M.

This work addresses the issue of interfacial layer formation in scaled high-k/metal gate stacks: the possibility of growing a thin SiOx interfacial layer in situ in a commercial ALD reactor has been evaluated, employing ozone-based Si oxidation. Three techniques (O3, O3/H2O and Pulsed) have been developed to grow scaled sub-nm interfacial layers and have been integrated in MOS capacitors and MOSFETs. A comparison based on electrical characterization shows that the performance of the proposed in situ methods is comparable or superior to that of existing ex situ techniques; specifically, the O3 method can grow aggressively scaled interfacial layers (4-5 Å) while preserving the electrical quality of the stack.

Published in:

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Date of Conference:

6-7 March 2012