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Impact of bulk defects in hydrogenated amorphous Si layers on performance of high efficiency HeteroJunctions solar cells assessed by 2D modeling

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6 Author(s)

This paper proposes to address how a-Si:H(p) bulk defects impact the macroscopic electrical characteristics of state-of-the-art HeteroJunction (HJ) solar cells. Thanks to 2D TCAD modeling we can give variation ranges for doping dependent defects concentrations for which solar cell performances are maximum. Besides, for low doping levels (ie. low experimental defects values), it is the adjacent ITO contact which governs the front side HJ electrostatics and thus the solar cell performance.

Published in:

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Date of Conference:

6-7 March 2012