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This paper proposes to address how a-Si:H(p) bulk defects impact the macroscopic electrical characteristics of state-of-the-art HeteroJunction (HJ) solar cells. Thanks to 2D TCAD modeling we can give variation ranges for doping dependent defects concentrations for which solar cell performances are maximum. Besides, for low doping levels (ie. low experimental defects values), it is the adjacent ITO contact which governs the front side HJ electrostatics and thus the solar cell performance.