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This paper presents Double Gate (DG) MOSFET models of the temperature dependences as part of a compact analytical model for the direct tunneling gate leakage and Trap-Assisted-Tunneling (TAT) current. We compare the adapted modeling calculations with experimental data of the gate leakage current in Trigate MOSFETs at various temperatures. The results of the direct tunneling current in the strong inversion regime and TAT in the subthreshold regime show good agreement with temperature dependent measurements with SiON as a gate oxide material. Our analysis above threshold voltage shows that the direct tunneling gate leakage current is clearly dominant over the TAT, while it is the opposite below threshold.