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Strain engineering in suspended graphene devices for pressure sensor applications

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5 Author(s)
Smith, A.D. ; Integrated Devices & Circuits, KTH R. Inst. of Technol., Stockholm, Sweden ; Vaziri, S. ; Delin, A. ; Ostling, M.
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The present paper describes a device structure for controlling and measuring strain in graphene membranes. We propose to induce strain by creating a pressure difference between the inside and the outside of a cavity covered with a graphene membrane. The combination of tight-binding calculations and a COMSOL model predicts strain induced band gaps in graphene for certain conditions and provides a guideline for potential device layouts. Raman spectroscopy on fabricated devices indicates the feasibility of this approach. Ultimately, pressure-induced band structure changes could be detected electrically, suggesting an application as ultra-sensitive pressure sensors.

Published in:

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Date of Conference:

6-7 March 2012