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In depth analysis of dopant effect on high-k metal gate effective work function

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10 Author(s)

The impact of additives (La, Al, Mg) at the SiO2/HfO2 interface has been investigated through ab-initio simulation and electrical measurements allowing a clear analysis of their respective impact on Vt shift.

Published in:

Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on

Date of Conference:

6-7 March 2012