By Topic

In depth analysis of dopant effect on high-k metal gate effective work function

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
C. Leroux ; CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 Grenoble Cedex 9, France ; S. Baudot ; M. Charbonnier ; A. Van Deer Geest
more authors

The impact of additives (La, Al, Mg) at the SiO2/HfO2 interface has been investigated through ab-initio simulation and electrical measurements allowing a clear analysis of their respective impact on Vt shift.

Published in:

2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

Date of Conference:

6-7 March 2012