Skip to Main Content
A comparative study of the effects of high pressure deuterium and hydrogen final anneal (HPD2FA and HPH2FA) is for the first time performed. Effects of high pressure final anneal (HPFA) on the electronic transport is deeply investigated. Reduction of the Coulomb scattering due to interface traps and possibly oxygen vacancies is evidenced after HPFA, and the link with long and short channel transport is explicited. The reliability of the annealed devices is also briefly discussed in terms of hot carrier injection (HCI) and negative bias thermal instability (NBTI).