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On the understanding of the effects of high pressure deuterium and hydrogen final anneal

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9 Author(s)
C. Diouf ; STMICROELECTRONICS, 850 rue Jean Monnet, BP 16, 38926, Crolles, France ; A. Cros ; P. Morin ; S. Renard
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A comparative study of the effects of high pressure deuterium and hydrogen final anneal (HPD2FA and HPH2FA) is for the first time performed. Effects of high pressure final anneal (HPFA) on the electronic transport is deeply investigated. Reduction of the Coulomb scattering due to interface traps and possibly oxygen vacancies is evidenced after HPFA, and the link with long and short channel transport is explicited. The reliability of the annealed devices is also briefly discussed in terms of hot carrier injection (HCI) and negative bias thermal instability (NBTI).

Published in:

2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

Date of Conference:

6-7 March 2012