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Room Temperature Optically Pumped 2.56- \mu{\rm m} Lasers With “W” Type InGaAs/GaAsSb Quantum Wells on InP Substrates

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3 Author(s)
Chien-Hung Pan ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Chia-Hao Chang ; Lee, Chien-Ping

The optically pumped laser using InGaAs/GaAsSb W-type quantum wells is demonstrated with a threshold power density ~ 40 kW/cm2. The L-L curve and the dramatic line width shrinkage above threshold confirm, for the first time, mid-infrared lasing in this structure on InP substrates. The lasing wavelength at 2.56 μm is the longest lasing wavelength at room temperature for the interband transition of InP-based material system.

Published in:

Photonics Technology Letters, IEEE  (Volume:24 ,  Issue: 13 )