By Topic

Performance Improvement of AlGaAs/GaAs QWIP by {\rm NH}_{3} Plasma Treatment

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Jheng-Han Lee ; Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan ; Che-Yu Chang ; Chang-Hung Li ; Shih-Yen Lin
more authors

The performance of AlGaAs/GaAs quantum well infrared photodetectors (QWIPs) with and without NH3 plasma treatment are investigated. It is demonstrated that the NH3 plasma treatment not only gets rid of the oxide defects, such as Ga2O3, As2O3, and As2O5, but also prevents the formation of oxides on the GaAs surface when exposed to atmosphere for one month. The peak responsivity of the QWIPs without NH3 plasma treatment is 0.48 A/W, and the detectivity is 3.13×109 cm-Hz1/2/W at 1.5 V and 60 K. However, the QWIP after the 10-m NH3 plasma treatment exhibits a better performance. The highest operation temperature can be increased from 60 to 90 K. At 90 K, the peak responsivity of the QWIP is 1.25 A/W and the detectivity is 3.54×109 cm-Hz1/2/W at 1.5 V.

Published in:

IEEE Journal of Quantum Electronics  (Volume:48 ,  Issue: 7 )