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Performance Improvement of AlGaAs/GaAs QWIP by {\rm NH}_{3} Plasma Treatment

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5 Author(s)
Jheng-Han Lee ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Che-Yu Chang ; Chang-Hung Li ; Lin, Shih-Yen
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The performance of AlGaAs/GaAs quantum well infrared photodetectors (QWIPs) with and without NH3 plasma treatment are investigated. It is demonstrated that the NH3 plasma treatment not only gets rid of the oxide defects, such as Ga2O3, As2O3, and As2O5, but also prevents the formation of oxides on the GaAs surface when exposed to atmosphere for one month. The peak responsivity of the QWIPs without NH3 plasma treatment is 0.48 A/W, and the detectivity is 3.13×109 cm-Hz1/2/W at 1.5 V and 60 K. However, the QWIP after the 10-m NH3 plasma treatment exhibits a better performance. The highest operation temperature can be increased from 60 to 90 K. At 90 K, the peak responsivity of the QWIP is 1.25 A/W and the detectivity is 3.54×109 cm-Hz1/2/W at 1.5 V.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:48 ,  Issue: 7 )

Date of Publication:

July 2012

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