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Growth and characterization of bulk crystals, thin films and patterned structures of AlN, GaN and Al/sub x/Ga/sub 1-x/N on SiC(0001) substrates and device-related research

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12 Author(s)
Davis, R.F. ; Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA ; Balkas, C.M. ; Bergman, L. ; Bremser, M.D.
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Summary form only given. Single crystals of AlN to 1 mm thickness were grown at 1950-2250/spl deg/C on 10/spl times/10 mm/sup 2/ 6H-SiC substrates via sublimation-re-condensation. Most crystals were 0.3 mm-1 mm thick transparent layers completely covering the substrates. Raman, optical and TEM results will be presented. Single crystals of GaN were grown by subliming powders of this material under NH/sub 3/. Raman and photoluminescence results will be shown.

Published in:

Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi

Date of Conference:

11-13 Aug. 1997