Skip to Main Content
Summary form only given. Single crystals of AlN to 1 mm thickness were grown at 1950-2250/spl deg/C on 10/spl times/10 mm/sup 2/ 6H-SiC substrates via sublimation-re-condensation. Most crystals were 0.3 mm-1 mm thick transparent layers completely covering the substrates. Raman, optical and TEM results will be presented. Single crystals of GaN were grown by subliming powders of this material under NH/sub 3/. Raman and photoluminescence results will be shown.
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Date of Conference: 11-13 Aug. 1997