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Preliminary investigation on the modification of electronic properties in surface passivated SnO2 nanowires with Schottky contacts on being exposed to 137Cs γ-radiation

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6 Author(s)
Kar, Ayan ; Electrical and Computer Engineering Department, University of Illinois, Chicago, Illinois 60607, USA ; Ahern, Ryan ; Gopalsami, N. ; Raptis, A.C.
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This paper demonstrates modification of SnO2 nanowire electronic and surface properties at room temperature on being exposed to γ-radiation. Electrons generated by the high energy photons are captured by oxygen sensitized nanowires and result in a change in the nanowire resistance along with an enhancement in the Schottky barrier thereby modulating current flow across the metal-semiconductor (M-S) junction. The time dependent change in device resistance shows a notably short response time to radiation. Further luminescence and transmission data from the irradiated nanowires indicate a change in the nature and density of surface defects after exposure to highly energetic γ-radiation.

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Journal of Applied Physics  (Volume:111 ,  Issue: 8 )