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Influence of the barrier properties on the mechanical stress and migration distribution in a copper metallization

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3 Author(s)
Jörg Kludt ; Information Technology Laboratory, Leibniz Universität Hannover, Schneiderberg 32, 30167, Germany ; J. Ciptokusumo ; K. Weide-Zaage

An exemplified calculation of migration effects was carried out for a via structure of 32nm node dimensions with wide lines. In the mechanical simulation the process-induced stress was considered in the simulations. The mass flux divergence was determined using a user routine which allows the calculation of migration effects under EM and SM load. The investigated cases show a very good correlation between simulation and measurements from literature. Additional the influence of new barrier materials like Ruthenium, as well as different dielectrics on the thermal-electrical mechanical behaviour was investigated.

Published in:

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2012 13th International Conference on

Date of Conference:

16-18 April 2012