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800 nW 43 nV/√Hz neural recording amplifier with enhanced noise efficiency factor

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6 Author(s)
Liu, L. ; Inst. of Microelectron., Singapore, Singapore ; Zou, X. ; Goh, W.L. ; Ramamoorthy, R.
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Advances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number of electrodes. The neural interface IC is one of the essential blocks to capture the weak neural signals. Presented is an energy-efficient low-noise neural recording amplifier with enhanced noise efficiency factor (NEF) for neural recording systems. Based on the conventional capacitive feedback and pseudo-resistor structure, the fully differential neural amplifier employs the current-reuse technique to achieve low noise and high current efficiency, consuming 800 nA at 1 V power supply. The measured thermal noise floor is 43nV/ √Hz and the input-referred noise is 5.71 Vrms when integrated from 1 Hz to 50 kHz, leading to an NEF of 2.59. The entire neural amplifier has been fabricated using a 0.18 m CMOS technology, occupying an area of 0.05 mm2.

Published in:

Electronics Letters  (Volume:48 ,  Issue: 9 )