By Topic

Investigation of Wideband Load Transformation Networks for Class-E Switching-Mode Power Amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Muh-Dey Wei ; Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, Aachen, Germany ; Danish Kalim ; Denis Erguvan ; Sheng-Fuh Chang
more authors

In this paper, single-ended and differential class-E load transformation networks (LTNs) for wideband operation are investigated. For this purpose, a differential third parallel-tuned tank LTN and a parallel-circuit load LTN without suppressing tanks are proposed to fulfill the class-E wideband condition. The differential parallel-circuit load (DPCL), which considers the finite RF chokes, has higher output resistance, and because of the differential structure, which ensures an open circuit at even harmonic frequencies, it is able to cover a wide frequency range. Consequently, the DPCL is well suited for highly integrated monolithic designs, as well as wideband application. Based on this analysis, a wideband class-E switching-mode power amplifier in CMOS 90 nm using the DPCL is designed. By deliberately combining the LTN with an on-chip balun, a compact size of 1.2 mm2 is achieved. The circuit performance dependency on bond-wire length variation is analyzed and discussed. Measured results show a peak output power of 28.7 dBm, power-added efficiency (PAE) of 48.0%, and drain efficiency of 55.0% at 2.3 GHz. From 1.7 to 2.7 GHz, PAE is higher than 42% and output power is above 25 dBm.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:60 ,  Issue: 6 )