By Topic

Operating TSV in Stable Accumulation Capacitance Region by Utilizing \hbox {Al}_{2}\hbox {O}_{3} -Induced Negative Fixed Charge

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is achieved by utilizing Al2O3-induced negative fixed charge (|Qf| = 7.44 × 1011 cm-2) at the Si-liner interface. This causes a positive shift in the flat-band voltage (ΔVFB = 6.85 V) and results in the TSV operating in the stable accumulation capacitance region within operating voltage of interests (~0-5 V). The leakage current density of the TSV with Al2O3 layer and PETEOS liner is improved by ~10× after annealing in forming gas (N2/H2) at 300 °C for 30 min.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 6 )