By Topic

The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in Germanium

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Roy, A.M. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Lin, J. ; Saraswat, K.C.

Recent experiments have demonstrated a reduction of Fermi-level pinning in contacts to n-type Ge by the insertion of a thin tunnel barrier at the interface. The presence of fixed charge in these interface layers can contribute to Schottky-barrier reduction. This work theoretically studies the effect of tunnel-barrier fixed charge on the specific contact resistivity. By simulating various tunnel-barrier materials and fixed-charge densities, we estimate the magnitude of fixed charge required for this mechanism to play an important role in Fermi-level unpinning.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 6 )