A novel compact CBCM method for high resolution measurement in 28nm CMOS technology

In this paper we present a Charged-Based Capacitance Measurement (CBCM) cell with an on-chip non-overlapping signal generation circuitry to reduce the number of probe pads, and to enable the test structure to operate at GHz range. Also, we describe the circuit design technique and measurement calibration to improve the resolution limit in 28 nm process node. These novel features combine to make it a very suitable for industrial applications for large amounts of accurate capacitance characterizations.