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A novel compact CBCM method for high resolution measurement in 28nm CMOS technology

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4 Author(s)
Kin Hooi Dia ; MediaTek Inc., Hsinchu, Taiwan ; Tsao, W. ; Cheng Hsing Chien ; Zheng Zeng

In this paper we present a Charged-Based Capacitance Measurement (CBCM) cell with an on-chip non-overlapping signal generation circuitry to reduce the number of probe pads, and to enable the test structure to operate at GHz range. Also, we describe the circuit design technique and measurement calibration to improve the resolution limit in 28 nm process node. These novel features combine to make it a very suitable for industrial applications for large amounts of accurate capacitance characterizations.

Published in:

Microelectronic Test Structures (ICMTS), 2012 IEEE International Conference on

Date of Conference:

19-22 March 2012