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High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer

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12 Author(s)
Liu, Yanli L. ; Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructure, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China ; Chen, Dunjun J. ; Xue, Junjun J. ; Liu, Bin
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A high-indium-content InGaN quantum-well structure was grown on a strain-relaxed InGaN template to reduce structural strain induced by lattice mismatch. The results show that the InGaN template, following a nanosculpting process, can maintain the good crystal quality of the underlying GaN layer and provide a new lattice parameter for pseudomorphically growing a high-indium-content quantum-well structure, and the fourth-order satellite peak of the multi-quantum-well structure is clearly distinguishable. Atom misalignment, a strain gradient, and a composition undulation along the growth direction in the quantum-well structure were not observed by high-resolution transmission electron microscopy and selected area diffraction.

Published in:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures  (Volume:30 ,  Issue: 3 )

Date of Publication:

May 2012

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