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An approach is shown for extracting the thermal conductivity of several buried oxide (BOX) materials from the thermal map of activated devices. First, the surface temperature of ICs that were built on top of the candidate Silicon-on-Insulator structure were determined experimentally and then numerical models of each of the structures were constructed and a numerical simulation tool was finally used to solve the inverse heat transfer problem and extract the effective thermal conductivity of each dielectric layer. The thermal conductivity and the interface thermal resistance of the dielectric films were also measured directly, in-situ, using a laser based non-contact, non-invasive time-domain thermoreflectance approach. The effective thermal conductivity was then calculated based on the measured values of the intrinsic thermal conductivity and interface thermal resistance and the results were compared with the first approach.