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Effect of parameter optimization effort over mosfet models' performances in analog circuits' simulation

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3 Author(s)
Balodi, D. ; Sch. of Phys., Univ. of Hyderabad, Hyderabad, India ; Saha, C. ; Govidacharyulu, P.A.

The importances of MOSFET parameter extraction process along with the requirements for good optimization strategy to obtain better modeling results are discussed. Scope for achieving the flexibilities in parameter extraction process and strategy formation has also been discussed with the example of BSIM MOSFET model in 0.8 μm CMOS technology and it is argued that with the poor extraction strategy, even the more powerful BSIM3 (Level-49) model produces the comparable results to that of BSIM (Level-13) model. Finally the BSIM (Level-13 and Level-49) modeling efforts for various geometry devices are shown in comparative manner which are followed by qualitative analysis to conclude the important aspects of these models with optimization effects.

Published in:

Devices, Circuits and Systems (ICDCS), 2012 International Conference on

Date of Conference:

15-16 March 2012

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