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Planar GeOI TFET Performance Improvement With Back Biasing

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4 Author(s)
Peter Matheu ; Applied Science and Technology Graduate Program, University of California, Berkeley, CA, USA ; Byron Ho ; Zachery A. Jacobson ; Tsu-Jae King Liu

Reverse back biasing of a planar germanium-on-insulator tunneling field-effect transistor provides for significant improvement in ION/IOFF, by over an order of magnitude for 0.25 V operating voltage. Optimization of the gate-to-source overlap and source doping gradient is key to maximizing the benefit of back biasing.

Published in:

IEEE Transactions on Electron Devices  (Volume:59 ,  Issue: 6 )