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This paper reports the design and analysis of a type of piezoresistive pressure sensor for micro-pressure measurement with a cross beam-membrane (CBM) structure. This new silicon substrate-based sensor has the advantages of a miniature structure and high sensitivity, linearity, and accuracy. By using the finite element method to analyze the stress distribution of the new structure and subsequently deducing the relationship between structural dimensions and mechanical performances, equations used to determine the CBM structure are established. Based on the CBM model and our stress and deflections equations, sensor fabrication is then performed on the silicon wafer via a process including anisotropy chemical etching and inductively coupled plasma. The structure's merits, such as linearity, sensitivity, and repeatability, have been investigated under the pressure of 5 kPa. Our results show that the precision of these equations is ±0.19%FS, indicating that this new small-sized structure offers easy preparation, high sensitivity, and high accuracy for micro-pressure measurement.