Cart (Loading....) | Create Account
Close category search window
 

Modeling of current gain compression in common emitter mode of a transistor laser above threshold base current

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Basu, R. ; Institute of Radio Physics and Electronics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009, India ; Mukhopadhyay, B. ; Basu, P.K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.4703926 

We have obtained the expressions for the terminal currents in a heterojunction bipolar transistor laser the base of which contains a quantum well (QW). The emitter-base junction is assumed to be abrupt, leading to abrupt discontinuity in quasi-Fermi level at the interface. The expressions for the terminal currents as a function of collector-emitter and base-emitter voltages are obtained from the solution of the continuity equation. The current density in the QW located at an arbitrary position in the base is related to the virtual state current density. The threshold current density in the QW is calculated by using the expression for gain obtained from Fermi golden rule. The plot of collector current (IC) versus collector-emitter voltage (VCE) for different values of base current shows the usual transistor characteristics, i.e., a rising portion after a cut-in VCE, and then a saturation behavior. The dc current gain remains constant. However, as the base current exceeds the threshold, a stimulated recombination rate is added to the spontaneous recombination rate and the plots of collector currents become closer for the same increase in base current. This current gain compression is in agreement with the experimental observation. Our calculated values qualitatively agree with other experimental findings; however some features like Early effect do not show up in the calculation.

Published in:

Journal of Applied Physics  (Volume:111 ,  Issue: 8 )

Date of Publication:

Apr 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.