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Quantum-Mechanical Charge Distribution in Cylindrical Gate-All-Around MOS Devices

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5 Author(s)
Spinelli, A.S. ; Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy ; Monzio Compagnoni, C. ; Maconi, A. ; Amoroso, S.M.
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We present a self-consistent 2-D quantum-mechanical model for charge distribution in cylindrical gate-all-around devices with computation of the gate tunneling current. The validity of 1-D approximations for the charge and the gate current is discussed, assessing the validity of a previously proposed analytical approximation for the tunneling current in the Fowler-Nordheim regime.

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Electron Devices, IEEE Transactions on  (Volume:59 ,  Issue: 7 )