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Fabrication of In-Doped ZnO Scintillator Mounted on a Vacuum Flange

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10 Author(s)
Kano, M. ; Daishinku Corp., Kakogawa, Japan ; Wakamiya, A. ; Yamanoi, Kohei ; Sakai, K.
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High quality In-doped ZnO single crystal was grown using the hydrothermal method. The growth rate for both <;0001>; and <;000-1>; directions is about 80 μm/day. The X-ray rocking curve (XRC) full width at half maximum (FWHM) of the (0002) reflection is 24.2 arcsec. In order to make it possible to use this material as a scintillator for in situ imaging of soft X-ray laser with high spatial resolution, we prepared an In-doped ZnO wafer (9.0 mm x 9.0 mm x 0.75 mm) and mounted it on a vacuum flange. The decay time constant is evaluated to be 120 ps, therefore making it an ideal scintillator for in situ imaging device of soft X-ray laser with high spatial resolution. Furthermore, In-doped ZnO scintillator with such short decay time constant is suitable for high accuracy alignment and synchronization of ultrafast, short wavelength laser sources for pump-and-probe experiments.

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Nuclear Science, IEEE Transactions on  (Volume:59 ,  Issue: 5 )