By Topic

Identification of Radiation Induced Dark Current Sources in Pinned Photodiode CMOS Image Sensors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
V. Goiffon ; Université de Toulouse, ISAE, Toulouse, France ; C. Virmontois ; P. Magnan ; P. Cervantes
more authors

This paper presents an investigation of Total Ionizing Dose (TID) induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed at a time enabling the direct evaluation of its contribution to the observed device degradation. By this approach, the origin of radiation induced dark current in PPD is localized on the pixel layout. The PPD peripheral shallow trench isolation does not seem to play a role in the degradation. The PPD area and a transfer gate contribution independent of the pixel dimensions appear to be the main sources of the TID induced dark current increase. This study also demonstrates that applying a negative voltage on the transfer gate during integration strongly reduces the radiation induced dark current.

Published in:

IEEE Transactions on Nuclear Science  (Volume:59 ,  Issue: 4 )