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A D-Band Passive Imager in 65 nm CMOS

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4 Author(s)
Gu, Q.J. ; Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA ; Xu, Z. ; Tang, A. ; Chang, M.-C.F.

A differential D-band (140 GHz) passive imager has been demonstrated in a 65 nm CMOS technology. It achieves a minimum noise equivalent power of 26 fW/√Hz with peak responsivity of 1.2 MV/W. The core circuit consumes chip area of 950×240 μm2 with dc power consumption of 152 mW. This work further pushes imagers in CMOS technology working towards higher millimeter wave/sub millimeter wave frequencies.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:22 ,  Issue: 5 )