By Topic

Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of \langle \hbox {110}\rangle Uniaxial-Tensile-Strained (001) nMOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Ming-Jer Chen ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Wei-Han Lee

We have recently experimentally extracted the piezo-effective-mass coefficients of 2-D electrons via the gate tunneling current of (001) n-channel metal-oxide-semiconductor field-effect transistors under 〈110〉 uniaxial compressive stress. The results pointed to the existence of a piezo-effective-mass coefficient around the fourfold conduction-band valley in the out-of-plane (quantum confinement) direction. To strengthen this further, here, we provide extra evidence. First, explicit guidelines are drawn to distinguish all the piezo-effective-mass coefficients. Then, a self-consistent strain quantum simulation is executed to fit literature data of both the mobility enhancement and gate current suppression in the uniaxial tensile stress situation. It is found that neglecting the fourfold-valley out-of-plane piezo-effective-mass coefficient, as in existing band structure calculations, only leads to a poor fitting.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 6 )