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We report a novel method of growing crystalline silicon layers by plasma enhanced chemical vapor deposition (PECVD) at 340°C for solar cell application. Flash lamp annealing method was used for the seed formation on glass [1]. We optimized the precursor a-Si thickness to achieve 100% crystalline volume fraction with a large grain >; 10 um. The proper surface treatment was found to be essential for the growth of an epitaxial layer on a poly-Si seed layer.
Published in:
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Date of Conference: 19-24 June 2011
- Page(s):
- 003084 - 003086
- ISSN :
- 0160-8371
- Print ISBN:
- 978-1-4244-9966-3
- INSPEC Accession Number:
- 12710373
- Conference Location :
- Seattle, WA
- Digital Object Identifier :
- 10.1109/PVSC.2011.6186596
- Product Type:
- Conference Publications
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