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Low temperature epitaxial growth of thin film silicon by PECVD for use in solar cell applications

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3 Author(s)
Dong Hyun Won ; Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea ; Min Ho Park ; Jang, Jin

We report a novel method of growing crystalline silicon layers by plasma enhanced chemical vapor deposition (PECVD) at 340°C for solar cell application. Flash lamp annealing method was used for the seed formation on glass [1]. We optimized the precursor a-Si thickness to achieve 100% crystalline volume fraction with a large grain >; 10 um. The proper surface treatment was found to be essential for the growth of an epitaxial layer on a poly-Si seed layer.

Published in:

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Date of Conference:

19-24 June 2011

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