Cart (Loading....) | Create Account
Close category search window
 

Development of novel Al doped zinc oxide film and its application to solar cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)

We have developed novel Al doped zinc oxide (AZO) films, AZO-X films, using d.c. magnetron sputtering process and have investigated their electro-optical properties and their surface morphology. AZO-X films showed a good balance between the transmittance in near-infrared area and the durability under 85°C-85%RH condition. And AZO-X film also had higher haze value after wet chemical etching than the value obtained in normal AZO film. Furthermore, AZO-X films have been applied to amorphous Si (a-Si) single-type solar cells as the front electrodes. The efficiency as high as 10.1% with high short-circuit current has been obtained, showing that this novel AZO-X is the new promising material for front electrode of a-Si solar cells.

Published in:

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Date of Conference:

19-24 June 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.